| PART |
Description |
Maker |
| EBE51RC4AAFA-4C-E EBE51RC4AAFA-5C-E |
512MB Registered DDR2 SDRAM DIMM
|
Elpida Memory
|
| WV3HG64M72AER534AD6SG WV3HG64M72AER403AD6MG WV3HG6 |
512MB - 64Mx72 DDR2 SDRAM REGISTERED, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| M393T6553CZA-CE7 M393T2950CZ3-CCC M393T2950CZ3-CD5 |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb C-die 72-bit ECC
|
SAMSUNG[Samsung semiconductor]
|
| W3HG64M72EER806AD7XG W3HG64M72EER665AD7XG W3H64M72 |
512MB - 64Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP Mini-DIMM
|
WEDC[White Electronic Designs Corporation]
|
| EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒
512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a>
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
| EBE52UD6ABSA EBE52UD6ABSA-5C-E EBE52UD6ABSA-4A-E |
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 512MB的DDR2 SDRAM内存的SO - DIMM400字64位，2个等级）
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 64M X 64 DDR DRAM MODULE, 0.6 ns, DMA240
|
Elpida Memory, Inc.
|
| IS43DR16320B IS46DR16320B |
512Mb DDR2 SDRAM
|
ISSI
|
| NT5TU64M8DE |
512Mb DDR2 SDRAM
|
Nanya
|
| K4T51043QB-ZCD5 K4T51163QB-GCD5 K4T51083QB-GCD5 K4 |
512Mb B-die DDR2 SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5PS12821F |
(HY5PS12xx21F) 512Mb DDR2 SDRAM
|
Hynix Semiconductor
|
| K4T51163QG K4T51083QG K4T51163QG-HCLD5 K4T51163QG- |
512Mb G-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
